Polishing agent and polishing method

Details Polishing agent and polishing method Polishing agent and polishing method

2006-04-11

2006-04-11

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S692000, C252S079100

Reexamination Certificate

active

07026245

ABSTRACT:
In order to polish an insulating film, a cerium oxide polishing agent (ceria slurry) is used. The ceria slurry is composed of cerium oxide powder containing Na, Ca, Fe, and Cr concentration of which is less than 10 ppm. Fragile inorganic and organic insulating films formed at relatively low temperatures can be polished without degrading the characteristics of the semiconductor element due to Na diffusion.

REFERENCES:
patent: 5064683 (1991-11-01), Poon et al.
patent: 5356513 (1994-10-01), Burke et al.
patent: 5389352 (1995-02-01), Wang
patent: 5445996 (1995-08-01), Kodera et al.
patent: 5607718 (1997-03-01), Sasaki et al.
patent: 5952243 (1999-09-01), Forester et al.

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