Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2008-05-27
2011-10-18
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C438S172000, C257SE21040, C257SE21403
Reexamination Certificate
active
08039352
ABSTRACT:
A method for fabricating a potential barrier for a nitrogen-face (N-face) nitride-based electronic device, comprising using a thickness and polarization induced electric field of a III-nitride interlayer, positioned between a first III-nitride layer and a second III-nitride layer, to shift, e.g., raise or lower, the first III-nitride layer's energy band with respect to the second III-nitride layer's energy band by a pre-determined amount. The first III-nitride layer and second III-nitride layer each have a higher or lower polarization coefficient than the III-nitride interlayer's polarization coefficient.
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Mishra Umesh K.
Palacios Gutierrez Tomas A.
Wong Man-Hoi
Gates & Cooper LLP
Ghyka Alexander
Nikmanesh Seahvosh J
The Regents of the University of California
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