Polarization-induced barriers for N-face nitride-based...

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S172000, C257SE21040, C257SE21403

Reexamination Certificate

active

08039352

ABSTRACT:
A method for fabricating a potential barrier for a nitrogen-face (N-face) nitride-based electronic device, comprising using a thickness and polarization induced electric field of a III-nitride interlayer, positioned between a first III-nitride layer and a second III-nitride layer, to shift, e.g., raise or lower, the first III-nitride layer's energy band with respect to the second III-nitride layer's energy band by a pre-determined amount. The first III-nitride layer and second III-nitride layer each have a higher or lower polarization coefficient than the III-nitride interlayer's polarization coefficient.

REFERENCES:
patent: 6177685 (2001-01-01), Teraguchi et al.
patent: 6624452 (2003-09-01), Yu et al.
patent: 6849882 (2005-02-01), Mishra et al.
patent: 7030428 (2006-04-01), Saxler
patent: 2008/0099755 (2008-05-01), Tansu et al.
International Search Report mailed Aug. 26, 2008, International application No. PCT/US08/64906.
Ambacher et al., “Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures,” J. Appl. Phys., vol. 87, No. 1, Jan. 1, 2000, pp. 334-344.
Unlu et al, “Band offsets in III-nitride heterostructures,” J. Phys. D: Appl. Phys. 35 (2002) 591-594.
Wong et al., “N-face high electron mobility transistors with GaN-spacer,” Phys. Stat. Sol. (a) 204, No. 6 (2007) 2049-2053.
Chini et al., “Fabrication and Characterization of N-face GaN/AlGaN/GaN HEMTs,” 63rd Device Research Conference, Jun. 20-22, 2005, Santa Barbara, CA, pp. 63-64.
Palacios et al., “AlGaN/GaN High Electron Mobility Transistors With InGaN Back-Barriers,” IEEE Electron Device Letters, vol. 27, No. 1, Jan. 2006, pp. 13-15.
Rajan et al. “Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures,” Japanese Journal of Applied Physics, vol. 44, No. 49, 2005, pp. L1478-L1480.
Rajan et al., “N-polar GaN/AlGaN/GaN high electron mobility transistors,” J. Appl. Phys., vol. 102, No. 4, Aug. 2007, pp. 44501-1-44501-6.
Chini, A. et al., “An experimental method to identify bulk and surface traps in GaN HEMTs,” 32ndInternational Symposium on Compound Semiconductors (ISCS), Sep. 18-22, 2005, Europa-Park Rust, Germany.
Rajan, S. et al., “Advanced transistor structures based on N-face GaN,” 32ndInternational Symposium on Compound Semiconductors (ISCS), Sep. 18-22, 2005, Europa-Park Rust, Germany.
Rajan, S. et al., “N-face AlGaN/GaN modulation-doped field effect transistors,” 6thInternational Conference on Nitridge Semiconductors (ICNS) 2005, Aug. 28-Sep. 2, 2005, Bremen, Germany.
Rajan, S. et al., “Structural and electrical characterization of n-face GaN grown on c-face SiC by MBE,” 47thElectronic Materials Conference, Jun. 22-24, 2005, Santa Barbara, California USA.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Polarization-induced barriers for N-face nitride-based... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polarization-induced barriers for N-face nitride-based..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polarization-induced barriers for N-face nitride-based... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4286857

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.