Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2010-10-13
2011-12-06
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S213000, C257S379000, C257SE29255, C365S148000
Reexamination Certificate
active
08072014
ABSTRACT:
A memory unit includes a resistive sense memory cell configured to switch between a high resistance state and a low resistance state upon passing a current through the resistive sense memory cell and a semiconductor transistor in electrical connection with the resistive sense memory cell. The semiconductor transistor includes a gate element formed on a substrate. The semiconductor transistor includes a source contact and a bit contact. The gate element electrically connects the source contact and the bit contact. The resistive sense memory cell electrically is connected to the bit contact. The source contact is more heavily implanted with dopant material then the bit contact.
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Hoso
Jung Chulmin
Khoury Maroun Georges
Kim Young Pil
Lu Yong
Campbell Nelson Whipps LLC
Mandala Victor A
Moore Whitney T
Seagate Technology LLC
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