Polarity dependent switch for resistive sense memory

Details Polarity dependent switch for resistive sense memory Polarity dependent switch for resistive sense memory

2009-03-20

2010-11-02

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000, C257S298000, C257S536000, C257SE21473, C257SE29001, C438S514000, C365S148000, C365S185050

Reexamination Certificate

active

07825478

ABSTRACT:
Polarity dependent switches for resistive sense memory are described. A memory unit includes a resistive sense memory cell configured to switch between a high resistance state and a low resistance state upon passing a current through the resistive sense memory cell and a semiconductor transistor in electrical connection with the resistive sense memory cell. The semiconductor transistor includes a gate element formed on a substrate. The semiconductor transistor includes a source contact and a bit contact. The gate element electrically connects the source contact and the bit contact. The resistive sense memory cell electrically connects to the bit contact. The source contact and the bit contact are asymmetrically implanted with dopant material.

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