Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2011-05-03
2011-05-03
Mandala, Victor (Department: 2826)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S133000, C438S135000, C438S140000, C438S525000, C257S213000, C257S379000, C257SE21389, C257SE21703, C257SE29211, C365S148000, C365S185050
Reexamination Certificate
active
07935619
ABSTRACT:
Methods of forming polarity dependent switches for resistive sense memory are described. Methods for forming a memory unit include implanting dopant material more heavily in a source contact than a bit contact of a semiconductor transistor, and electrically connecting a resistive sense memory cell to the bit contact. The resistive sense memory cell is configured to switch between a high resistance state and a low resistance state upon passing a current through the resistive sense memory cell.
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Jung Chulmin
Khoury Maroun Georges
Kim Young Pil
Lu Yong
Campbell Nelson Whipps LLC
Mandala Victor
Moore Whitney
Seagate Technology LLC
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