Poison-free and low ULK damage integration scheme for...

Details Poison-free and low ULK damage integration scheme for... Poison-free and low ULK damage integration scheme for...

2011-08-30

2011-08-30

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S666000, C257SE21579, C257SE21577

Reexamination Certificate

active

08008200

ABSTRACT:
A method of forming a dual damascene structure is disclosed. A lower dielectric hardmask layer and an upper dielectric hardmask layer are deposited on an ultra low-k film. A first via is formed in the upper hardmask layer. Next, a first trench is formed using a tri-layer resist scheme. Finally, a full via and a full trench are formed simultaneously. An optional etch-stop layer can be used in the ultra low-k layer to control trench depth.

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