Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Patent
1998-05-29
2000-11-14
Dutton, Brian
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
438325, 438335, H01L 218228, H01L 21331, H01L 218222
Patent
active
061469564
ABSTRACT:
The invention relates to a process for making a lateral PNP bipolar electronic device integrated monolithically on a semiconductor substrate together with other bipolar devices of the NPN type, said device being incorporated to an electrically insulated multilayer structure. The device includes a semiconductor substrate doped with impurities of the P type; a first buried layer doped with impurities of the N type to form a base region; and a second layer, overlying the first and having conductivity of the N type, to form an active area with opposite collector and emitter regions being formed in said active area and separated by a base channel region. The width of the base channel region is defined essentially by a contact opening formed above an oxide layer deposited over the base channel region. Advantageously, the contact opening is formed by shifting an emitter mask.
REFERENCES:
patent: 4437897 (1984-03-01), Kemlage
patent: 4510676 (1985-04-01), Anantha et al.
patent: 5637516 (1997-06-01), Miller
patent: 5796157 (1998-08-01), Fallico et al.
A. E. Michel and A. Schmitt, "Stabilized Lateral PNP Transistor," IBM Technical Disclosure Bulletin, vol. 24, No. 10, Mar. 1982, pp. 5154-5155.
Alemanni Carlo
Pinto Angelo
Dutton Brian
Galanthay Theodore E.
Johnson Brian L.
STMicroelectronics S.r.l.
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