PNAF Etchant for aluminum and silicon

Details PNAF Etchant for aluminum and silicon PNAF Etchant for aluminum and silicon

1978-12-26

1980-10-28

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156657, 1566591, 156662, 156665, 252 793, 252 794, C09K 1306, C09K 1308, H01L 21308

Patent

active

042305225

ABSTRACT:
A chemical etchant and a process for chemically etching thin films of aluminum, silicon, and aluminum-silicon alloy on composite structures which may be, for example, integrated circuit devices. The etching process utilizes a mixture of phosphoric acid, nitric acid, acetic acid, a fluoroborate anion containing compound such as fluoroboric acid for providing fluoride ions, a surfactant, and water. This PNAF etchant may be used in fabricating a wafer of integrated circuit devices without lifting photoresist maskant thereon. The formulation provides relatively rapid dissolution of silicon as compared to its etch rates for silicon oxide and silicon nitride. In addition, the etchant has been found suitable for relatively long term use in a production environment.

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Haruilchuck et al., "Metal Etchant" IBM Technical Disclosure Bulletin, vol. 15, No. 9 (2/73) p. 2985.

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