PN junction and MOS capacitor hybrid resurf transistor

Details PN junction and MOS capacitor hybrid resurf transistor PN junction and MOS capacitor hybrid resurf transistor

2010-07-29

2011-12-13

Le, Thao (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27092, C438S243000

Reexamination Certificate

active

08076722

ABSTRACT:
A high voltage semiconductor device, such as a RESURF transistor, having improved properties, including reduced on state resistance. The device includes a semiconductor substrate with a drift region between source region and drain regions. The drift region includes a structure having a spaced trench capacitor extending between the source region and the drain region and a vertical stack extending between the source region and the drain region. When the device is in an on state, current flows between the source and drain regions; and, when the device is in an off/blocking state, the drift region is depleted into the stack.

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