PMOS transistor of semiconductor device, semiconductor...

Details PMOS transistor of semiconductor device, semiconductor... PMOS transistor of semiconductor device, semiconductor...

2006-08-11

2008-10-14

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257SE27062, C257SE27064, C438S216000

Reexamination Certificate

active

07436036

ABSTRACT:
A PMOS transistor of a semiconductor device exhibiting improved characteristics, a semiconductor device incorporating the same, and a method for manufacturing the semiconductor device. The PMOS transistor incorporates a first gate insulation film formed in a predetermined region on a semiconductor substrate and comprising a hafnium-based oxide, a second gate insulation film formed on the first gate insulation film for shielding reaction between hafnium and silicon, and a gate conductive film formed on the second gate insulation film and comprising polysilicon.

REFERENCES:
patent: 6621114 (2003-09-01), Kim et al.
patent: 6787421 (2004-09-01), Gilmer
patent: 6890811 (2005-05-01), Hou et al.
patent: 2005/0098839 (2005-05-01), Lee et al.
patent: 2005/0148127 (2005-07-01), Jung et al.
patent: 2006/0214207 (2006-09-01), Nabatame et al.
patent: 2007/0004080 (2007-01-01), Ouyang
patent: 2005-0054920 (2005-06-01), None

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