PMGI bi-layer lift-off process

Details PMGI bi-layer lift-off process PMGI bi-layer lift-off process

1987-07-24

1989-03-21

Michl, Paul R.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430156, 430312, 430319, 430324, 430327, G03C 1495, G03C 176

Patent

active

048142581

ABSTRACT:
An effective bi-layer photoresist structure comprising a bottom planarization layer or PMGI and a top photoresist imaging layer which eliminates an intermixing layer between the top photoresist imaging layer and the bottom planarization layer, and provides a desired undercut profile between the two layers to insure efficient lift-off for gate fabrication, said undercut profile formed due to the solubility effect of a solvent soak on the two layers.

REFERENCES:
patent: 4212935 (1980-07-01), Canavello et al.
patent: 4524121 (1985-06-01), Gleim et al.
patent: 4567132 (1986-01-01), Fredericks et al.
patent: 4569897 (1986-02-01), Kalyanaraman
IBM Technical Disclosure, vol. 20, No. 7, Dec. 1977, p. 2671.
IBM Technical Disclosure, vol. 26, No. 4, Sep. 1983, pp. 1955-1959.
Hovel et al., "Improved Metal Removal For Integrated Circuit Fabrication"; Insulation/Circuits, vol. 27, No. 2, Feb. 1981.
Sasago et al., "Improved Bilayer Resist System Using Contrast-Enhanced Lithography with Water-Soluble Photopolymer", SPIE vol. 631, Advances in Resist Technology and Processing 111, 1986, pp. 321-329.
Chao et al., "A Submicron Gate-Wall Structure For Low-Noise MESFET's", Conference: International Electron Devices Meeting, Washington D.C. U.S.A., Dec. 7-9, 1981.

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