Plural wells structure in a semiconductor device

Details Plural wells structure in a semiconductor device Plural wells structure in a semiconductor device

1998-11-30

2000-09-05

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257509, 257513, 257523, 257370, 257378, H01L 2976

Patent

active

06114729&

ABSTRACT:
Wells of a semiconductor device suitable for achieving high integration, and a method for forming the same are disclosed. The wells of a semiconductor device include a first conductivity type semiconductor substrate where a cell region and a periphery region are defined, a second conductivity type shield region in the entire cell region and in the entire periphery region at a depth below surface of the semiconductor substrate, a first conductivity type well on the second conductivity type shield region beneath the surface of the semiconductor substrate, a second conductivity type shield sidewall formed in the second conductivity type shield region and the first conductivity type well at border of the cell and periphery regions, a first conductivity type buried region formed at the second conductivity type shield region in the periphery region, and a second conductivity type well on the first conductivity type buried region in the first conductivity type well.

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