Plural emitter memory with voltage clamping plural emitter trans

Static information storage and retrieval – Systems using particular element – Flip-flop

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365179, G11C 1140

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active

048233153

ABSTRACT:
A transistor memory cell device comprising a pair of cross-coupled transistors constituting storage elements for storing binary information and having column drive emitter inputs to which a relatively high column drive current is applied for the selective read or write operation of storage elements of the cell device. A constant current source provides a relatively low value hold current to maintain the binary digit information stored in the storage elements in the absence of column drive current. A voltage clamping dual emitter transistor has the emitters thereof connected directly to the respective base-collector interconnections of the cross-coupled transistors, with the base of the clamping transistor having applied to it an offset voltage higher than a voltage applied to a non select line connected to the collector circuits of the cross-coupled transistors. This provides a cell device in which the possible forward bias of the cross-coupled transistor pair base-collector junction is small enough to avoid saturation.

REFERENCES:
patent: 3745540 (1973-07-01), Taniguchi et al.
patent: 3821719 (1974-06-01), Taniguchi et al.

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