Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-06-10
2000-04-04
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438693, H01L 2130
Patent
active
060460997
ABSTRACT:
Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH.ltoreq.8. The third slurry can be used to polish titanium films.
REFERENCES:
patent: 5084071 (1992-01-01), Nenadic et al.
Cadien Kenneth C.
Feller Daniel A.
Bowers Charles
Christianson Keith
Intel Corporation
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