Platinum-free ferroelectric memory cell with intermetallic barri

Details Platinum-free ferroelectric memory cell with intermetallic barri Platinum-free ferroelectric memory cell with intermetallic barri

1996-01-03

1998-07-07

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257300, 257304, H01L 2976

Patent

active

057773564

ABSTRACT:
A ferroelectric memory cell integrated on a silicon substrate. The ferroelectric stack includes a ferroelectric layer, such as PbNbZrTiO, sandwiched between conductive metal-oxide electrodes, such as the perovskite LaSrCoO. The ferroelectric stack is grown over a barrier layer of an intermetallic alloy such as Ni.sub.3 Al or Ti.sub.3 Al, which is highly resistant to oxidation at elevated temperatures. The intermetallic layer is either deposited directly over the silicon substrate or over an intermediate TiN layer. The resulting structure does not require a platinum barrier layer.

REFERENCES:
patent: 4017890 (1977-04-01), Howard et al.
patent: 5051792 (1991-09-01), Sands
patent: 5075755 (1991-12-01), Sands
patent: 5088002 (1992-02-01), Ogawa
patent: 5169485 (1992-12-01), Allen
patent: 5343353 (1994-08-01), Miki et al.
patent: 5371699 (1994-12-01), Larson
patent: 5406445 (1995-04-01), Fujii et al.
patent: 5449933 (1995-09-01), Shindo et al.
Ogawa, T. et al, "Ferroelectricity of Lanthanum-Modified Lead-Titanate Thin Films Deposited on Nickel Alloy Electrodes," Mat. Res. Soc. Symp. Proc., vol. 243, pp. 93-99, no date.
Lee, K. B. et al, "Effect of Surface Morphology of NiCr-Bottom Electrode on Preparation of Ferroelectric PZT Thin Film Capacitor," Mat. Res. Soc. Symp. Proc., vol. 433, pp. 181-186, no date.
Baker, H., Ed., "Alloy Phase Diagrams," ASM Handbook, ASM International, vol. 3, 1992, pp. 2.cndot.49, 3.cndot.9, no date.
Liu et al., "Ordered Intermetallics," ASM Handbook. ASM International, vol. 2, Properties and Selection: Nonferrous Alloys and Special-Purpose Materials, 1992, pp. 913-942, no month.
Kinney, "Signal magnitudes in high density ferroelectric memories," Integrated Ferroelectrics, vol. 4, 1994, pp. 131-144.
Lines and Glass, Principles and Applications of Ferroelectrics and Related Materials, (Clarendon Press, 1997), pp. 620-625.

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