Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-03-18
2008-03-18
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21586
Reexamination Certificate
active
10482104
ABSTRACT:
The present invention relates to a plating solution useful for forming embedded interconnects by embedding a conductive material in fine recesses for interconnects provided in the surface of a substrate, such as a semiconductor substrate, or for forming a protective layer for protecting the surface of embedded interconnects, a semiconductor device manufactured by using the plating solution and a method for manufacturing the semiconductor device. The plating solution contains copper ions, metal ions of a metal, and the metal is capable of forming with copper a copper alloy in which the metal does not form a solid solution with copper, a complexing agent, and a reducing agent free from alkali metal.
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Inoue Hiroaki
Kanayama Makoto
Matsumoto Moriji
Wang Xinming
Coleman W. David
Ebara Corporation
Wenderoth , Lind & Ponack, L.L.P.
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