Plating of noble metal electrodes for DRAM and FRAM

Details Plating of noble metal electrodes for DRAM and FRAM Plating of noble metal electrodes for DRAM and FRAM

1996-04-23

1998-08-04

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438650, H01L 2144

Patent

active

057893209

ABSTRACT:
Noble metal plating on a preexisting seed layer is used in the fabrication of electrodes for DRAM and FRAM. The plating may be spatially selective or nonselective. In the nonselective case, a blanket film is first plated and then patterned after deposition by spatially selective material removal. In the selective case, the plated deposits are either selectively grown in lithographically defined areas by a through-mask plating technique, or selectively grown as a conformal coating on the exposed regions of a preexisting electrode structure. A diamond-like carbon mask can be used in the plating process. A self-aligned process is disclosed for selectively coating insulators in a through-mask process.

REFERENCES:
patent: 5342806 (1994-08-01), Asahina
patent: 5561082 (1996-10-01), Matsuo et al.
patent: 5565707 (1996-10-01), Colgan et al.
patent: 5633781 (1997-05-01), Saenger et al.

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