Plating method including pretreatment of a surface of a base...

Details Plating method including pretreatment of a surface of a base... Plating method including pretreatment of a surface of a base...

2004-06-10

2008-08-19

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S678000, C438S692000, C257SE23161

Reexamination Certificate

active

07413983

ABSTRACT:
The present invention provides a plating method and a plating apparatus which can securely form a metal film (protective film) by electroless plating on the exposed surfaces of a base metal, such as interconnects without the formation of voids in the base metal. The plating method including providing a semiconductor device having an embedded interconnect structure, carrying out pretreatment of interconnects with a pre-treatment liquid containing a surface activating agent for the interconnects, carrying out catalytic treatment of the interconnects with a catalytic treatment liquid containing catalyst metal ions and an excessive etching inhibitor for the interconnects, and forming a protective film by electroless plating selectively on the surfaces of the interconnects.

REFERENCES:
patent: 5674787 (1997-10-01), Zhao et al.
patent: 5695810 (1997-12-01), Dubin et al.
patent: 6294059 (2001-09-01), Hongo et al.
patent: 6375693 (2002-04-01), Cote et al.
patent: 2001/0055934 (2001-12-01), Cheung
patent: 2005/0245080 (2005-11-01), Wang et al.
patent: 2006/0003570 (2006-01-01), Shanmugasundram et al.

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