Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-01-30
2007-01-30
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S643000, C438S653000, C257SE21174, C257SE21175
Reexamination Certificate
active
10989658
ABSTRACT:
A plating method is capable of depositing a plated film having excellent in-plane uniformity with respect to a thin seed layer and excellent embeddability with respect to fine damascene structures. The plating method includes: positioning an electric resistor between a conductive layer formed on at least a portion of a surface of a substrate and an anode; introducing respectively a plating solution into a space between the conductive layer and the anode on a conductive layer side, and an anode solution into a space between the conductive layer and the anode on an anode side, thereby filling the space with a plating bath composed of the plating solution and the anode solution, with the plating solution containing 25 to 75 g/L of copper ions and at least 0.4 mole/L of an organic acid or an inorganic acid, and the anode solution being of the same composition as the plating solution, or containing 0 to 75 g/L of copper ions and at most 0.6 mole/L of an organic acid or an inorganic acid; and applying a voltage between the conductive layer and the anode to plate a surface of the conductive layer.
REFERENCES:
patent: 6113771 (2000-09-01), Landau et al.
patent: 6350366 (2002-02-01), Landau et al.
patent: 6632335 (2003-10-01), Kunisawa et al.
PCT WO 02/47139 A2, Fumio Kondo, Substrate Processing Method, Jun. 13, 2002.
Ide Kunihito
Kanda Hiroyuki
Mishima Koji
Nomura Kazufumi
Suzuki Hidenao
Ebara Corporation
Lebentritt Michael
Lee Kyoung
Wenderoth , Lind & Ponack, L.L.P.
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