Plateline voltage pulsing to reduce storage node disturbance...

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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C365S230030

Reexamination Certificate

active

10866834

ABSTRACT:
Methods (50, 70) and ferroelectric devices (102) are presented, in which pulses (113) are selectively applied to platelines (PL) of one or more non-selected ferroelectric memory cells (106) during memory access operations to mitigate cell storage node disturbances.

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