Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2004-12-03
2008-03-25
Phan, Trong (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S149000, C365S226000
Reexamination Certificate
active
07349237
ABSTRACT:
A memory circuit and method to reduce wordline coupling is disclosed. The circuit includes a plurality of memory cells arranged in rows (702, 704, and706) and columns (750, 752). A first conductor (710, 850) is coupled to a plurality of the rows (702, 704, and706) of memory cells. A first transistor (810) has a current path coupled between a voltage supply terminal (800) and the first conductor (850) and a control terminal coupled to receive a first control signal (PLV). A second transistor (820) has a current path coupled between the voltage supply terminal and the first conductor and a control terminal coupled to receive a second control signal (PLW).
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Fong John
Lin Sung-Wei
Madan Sudhir K.
Brady III W. James
Garner Jacqueline J.
Phan Trong
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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