Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-03-18
2008-03-18
Tran, Long K. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S400000, C029S025410, C029S025420, C029S025350, C361S306100, C361S306300
Reexamination Certificate
active
11066575
ABSTRACT:
A multilayer electronic component includes a plurality of dielectric layers interleaved with a plurality of internal electrode elements and a plurality of internal anchor tabs. Portions of the internal electrode elements and anchor tabs are exposed along the periphery of the electronic component in one or more aligned columns. Each exposed portion is within a predetermined distance from other exposed portions in a given column such that bridged terminations may be formed by depositing one or more plated termination materials over selected of the respectively aligned columns. Internal anchor tabs may be provided and exposed in prearranged relationships with other exposed conductive portions to help nucleate metallized plating material along the periphery of a device. External anchor tabs or lands may be provided to form terminations that extend to top and/or bottom surfaces of the device. Selected of the conductive elements may be formed by a finite volume percentage of ceramic material for enhanced durability, and external lands may be thicker than internal conductive elements and/or may also be embedded in top and/or bottom component surfaces. A variety of potential internal electrode configurations are possible including ones configured for orientation-insensitive component mounting and for high density peripheral termination interdigitated capacitors.
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Dattaguru Sriram
Galvagni John L.
Heistand, II Robert
Horn Jeffrey A.
Ladew Richard A.
AVX Corporation
Dority & Manning P.A.
Tran Long K.
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