Plated nickel-gold/dielectric interface for passivated MMICs

Details Plated nickel-gold/dielectric interface for passivated MMICs Plated nickel-gold/dielectric interface for passivated MMICs

1996-07-15

1999-01-19

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438650, 438654, 257753, 257766, H01L 21441

Patent

active

058613412

ABSTRACT:
A thin film (at least one atomic layer to about 400 .ANG.) of nickel is electrolytically plated on top of electrolytically-plated gold electrodes in GaAs monolithic microwave integrated circuits (MMICs) without any additional photoresist masking step. The thin electrolytically-plated nickel film improves adhesion of a passivating dielectric layer (e.g., silicon dioxide, silicon nitride, and silicon oxynitride) formed on the electrolytically-plated gold electrodes. The electrolytically-plated nickel film can be removed locally to facilitate the fabrication of plated silver bumps (for off-chip electrical connections and thermal paths) on passivated flip chip MMICs.

REFERENCES:
patent: 4674176 (1987-06-01), Tuckerman
patent: 4770897 (1988-09-01), Wu
patent: 4794093 (1988-12-01), Tong et al.
patent: 5376574 (1994-12-01), Peterson
patent: 5406122 (1995-04-01), Wong et al.
patent: 5730853 (1998-03-01), Smith et al.

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