Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-09
2007-10-09
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S390000, C257SE21667
Reexamination Certificate
active
10579623
ABSTRACT:
The storage medium comprises an array of memory cells (3) which can be addressed by first (1) and second (2) conductors. Each memory cell (3) comprises one zone (10) of an active layer (8) which is initially electrically insulating and which can be made electrically conductive by means of localized plastic deformation (4), such as to selectively connect the first (1) and second (2) associated conductors. Binary information stored in the memory cell (3) is determined by the electrical conducting state of the corresponding zone (10) of the active layer (8). The active layer (8) can be formed using a charged resin. The medium production method comprises assembly of a blank storage medium having an active layer (8) which is in the initial insulating state, production of a stamping die having a stamping pattern that corresponds to the information to be stored, and stamping of the storage medium using the stamping die.
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Bechevet Bernard
Gaud Pierre
Sousa Veronique
Commissariat a l''Energie Atomique
Oliff & Berridg,e PLC
Singal Ankush
Smith Matthew
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