Plastic surface mount large area power device

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With heat sink means

Reexamination Certificate

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Details

C257S459000, C257S503000, C257S706000, C257S707000, C257SE23020, C257SE23031, C257SE23040, C257SE21505, C438S122000

Reexamination Certificate

active

07741706

ABSTRACT:
A low profile, 1 or 2 die design, surface mount high power microelectronic package with coefficient of expansion (CTE) matched materials such as Silicon die to Molybdenum conductor (bond pads). The CTE matching of the materials in the package enables the device to withstand repeated, extreme temperature range cycling without failing or cracking. The package can be used for transient voltage suppression (TVS), Schottky diode, rectifier diode, or high voltage diodes, among other uses. The use of a heat sink metal conductor that has a very high modulus of elasticity allows for a very thin wall plastic locking to be utilized in order to minimize the footprint of the package.

REFERENCES:
patent: 5067005 (1991-11-01), Michii et al.
patent: 5747877 (1998-05-01), Wilson
patent: 6410356 (2002-06-01), Wojnarowski et al.
patent: 101 46 854 (2003-04-01), None
patent: 0 554 893 (1993-08-01), None
patent: 2 668 854 (1992-05-01), None
Int'l Search Report/ and Written Opinion, Apr. 25, 2008, Autry, et al.

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