Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With heat sink means
Reexamination Certificate
2006-09-29
2010-06-22
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
With heat sink means
C257S459000, C257S503000, C257S706000, C257S707000, C257SE23020, C257SE23031, C257SE23040, C257SE21505, C438S122000
Reexamination Certificate
active
07741706
ABSTRACT:
A low profile, 1 or 2 die design, surface mount high power microelectronic package with coefficient of expansion (CTE) matched materials such as Silicon die to Molybdenum conductor (bond pads). The CTE matching of the materials in the package enables the device to withstand repeated, extreme temperature range cycling without failing or cracking. The package can be used for transient voltage suppression (TVS), Schottky diode, rectifier diode, or high voltage diodes, among other uses. The use of a heat sink metal conductor that has a very high modulus of elasticity allows for a very thin wall plastic locking to be utilized in order to minimize the footprint of the package.
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Int'l Search Report/ and Written Opinion, Apr. 25, 2008, Autry, et al.
Autry Tracy
Barnes Christopher Alan
Digiacomo George A.
Kelly Stephen G.
Kling Robert C.
Microsemi Corporation
Tran Long K
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