Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Patent
1997-05-23
1999-03-16
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
257 79, 257184, 257225, 257414, H01L 3524, H01L 51100
Patent
active
058833978
ABSTRACT:
A plastic functional element comprising a lower electrode and a transparent upper electrode provided perpendicular to the contact surface between a first oxidation reduction material membrane and a second oxidation reduction material membrane, the oxidation reduction potentials of which being different each other, wherein, based on the difference in oxidation reduction potentials between the oxidation reduction material membranes, by irradiating light to the contact surface or applying a voltage between the electrodes, the condition of electron in the oxidation reduction material is controlled, so as to store information of incident light or applied voltage, and an operational function responding to an input voltage is given, thereby the minimization in size is possible to realize a high density and high speed operation.
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10th Symposium on Future Electron Devices "Fractal Time Response of Molecular Assemblies and Possible Applications", Saito et al., Oct. 1991. pp. 107-110.
IEICE Trans. Fundamentals "Non-integer Exponents in Electronic Circuits: F-Matrix Representation of the Power-Law Conductivity" Chenical Physics Letters Excitation Energy Relaxation of Rhoda-mine B in Languir-Blodgett Monolayer Films: Picosecond Time-Resolved Fluorescence Studies, Tamai et al., vol. 147, No. 2, May 1988, pp. 25-29. vol. E75-A, No. 6, Jun. 1992, Sugi et al., pp. 720-725.
Akiyama Kouichi
Isoda Satoru
Kawakubo Hiroaki
Nishikawa Satoshi
Jr. Carl Whitehead
Mitsubishi Denki & Kabushiki Kaisha
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