Plasma treatment of low dielectric constant dielectric...

Details Plasma treatment of low dielectric constant dielectric... Plasma treatment of low dielectric constant dielectric...

2005-08-16

2005-08-16

Zarneke, David A. (Department: 2829)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

Reexamination Certificate

active

06930056

ABSTRACT:
A process for forming an integrated circuit structure comprises forming a layer of low k dielectric material over a previously formed integrated circuit structure, and treating the upper surface of the layer of low k dielectric material with a plasma to form a layer of densified dielectric material over the remainder of the underlying layer of low k dielectric material, forming a second layer of low k dielectric material over the layer of densified dielectric material, and treating this second layer of low k dielectric material to form a second layer of densified dielectric material over the second layer of low k dielectric material. The layer or layers of densified dielectric material formed from the low k dielectric material provide mechanical support and can then function as etch stop and mask layers for the formation of vias and/or trenches.

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