Plasma treatment of an interconnect surface during formation of

Details Plasma treatment of an interconnect surface during formation of Plasma treatment of an interconnect surface during formation of

1998-08-28

2000-11-21

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438643, 438648, 438775, H01L 214763

Patent

active

06150257&

ABSTRACT:
The present invention relates to the formation of an ILD layer while preventing or reducing oxidation of the upper surface of a metallic interconnect. Avoidance of oxidation of the upper surface of a metallic interconnect is achieved according to the present invention by passivating the exposed upper surface of the metallic interconnect prior to formation of the ILD. In order to avoid the oxidation of an upper surface of an interconnect during the formation of an ILD layer, an in situ passivation of the upper surface of the interconnect is formed immediately prior to or simultaneously with the formation of the ILD.

REFERENCES:
patent: 5405492 (1995-04-01), Moslehi
patent: 5529954 (1996-06-01), Iijima et al.
patent: 5592024 (1997-01-01), Aoyama et al.
patent: 5633200 (1997-05-01), Hu
patent: 5659201 (1997-08-01), Wollesen

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