Plasma treatment of a semiconductor surface for enhanced...

Details Plasma treatment of a semiconductor surface for enhanced... Plasma treatment of a semiconductor surface for enhanced...

2009-10-14

2011-10-04

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S787000, C438S788000, C438S792000

Reexamination Certificate

active

08030220

ABSTRACT:
A method for forming a dielectric layer is provided. The method may include providing a semiconductor surface and etching a thin layer of the semiconductor substrate to expose a surface of the semiconductor surface, wherein the exposed surface is hydrophobic. The method may further include treating the exposed surface of the semiconductor substrate with plasma to neutralize a hydrophobicity associated with the exposed surface, wherein the exposed surface is treated using plasma with a power in a range of 100 watts to 500 watts and for duration in a range of 1 to 60 seconds. The method may further include forming a metal-containing layer on a top surface of the plasma treated surface using an atomic layer deposition process.

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International Search Report issued in PCT Application No. PCT/US2006/060775, mailed Oct. 1, 2008, 3 pages.

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