Plasma treatment method for treatment of a large-area work surfa

Details Plasma treatment method for treatment of a large-area work surfa Plasma treatment method for treatment of a large-area work surfa

1994-12-22

1997-07-01

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427569, 427571, 427534, 216 68, 216 70, 216 71, 423446, H05H 124, B01J 306, H01L 21306

Patent

active

056436394

ABSTRACT:
A method and apparatus for generating plasmas adapted for chemical vapor deposition, etching and other operations, and in particular to the deposition of large-area diamond films, wherein a chamber defined by sidewalls surrounding a longitudinal axis is encircled by an axially-extending array of current-carrying conductors that are substantially transverse to the longitudinal axis of the chamber, and a gaseous material is provided in the chamber. A high-frequency current is produced in the conductors to magnetically induce ionization of the gaseous material in the chamber and form a plasma sheath that surrounds and extends along the longitudinal axis and conforms to the sidewalls of the chamber. A work surface extending in the direction of the longitudinal axis of the chamber is positioned adjacent a sidewall, exposed to the plasma sheath and treated by the plasma. Preferably, the ratio of the width to the height of the chamber is 10:1 or larger so that the chamber includes a large area planar surface adjacent the plasma sheath and adjacent to which a large area substrate or a plurality of substrates is arranged, whereby large area treatment, such as diamond deposition, can be performed.

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