Plasma treatment method and plasma treatment device

Details Plasma treatment method and plasma treatment device Plasma treatment method and plasma treatment device

2011-07-05

2011-07-05

Huynh, Andy (Department: 2829)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S788000, C438S792000, C257SE21057, C427S569000, C427S571000

Reexamination Certificate

active

07972946

ABSTRACT:
Provided are a plasma treatment method and a plasma treatment device capable of forming a silicon nitride film having high compressive stress. In the plasma treatment method for depositing the silicon nitride film on a process target substrate by use of plasma of raw material gas containing silicon and hydrogen and of nitrogen gas, ion energy for disconnecting nitrogen-hydrogen bonding representing a state of bonding between the hydrogen in the raw material gas and the nitrogen gas is applied to the process target substrate so as to reduce an amount of nitrogen-hydrogen bonding contained in the silicon nitride film.

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