Plasma treatment method and apparatus

Details Plasma treatment method and apparatus Plasma treatment method and apparatus

1995-04-19

1999-05-04

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723E, 20429834, 31511121, H05H 100

Patent

active

059001038

ABSTRACT:
A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

REFERENCES:
patent: 4863549 (1989-09-01), Grunwald
patent: 5057185 (1991-10-01), Thomas, III et al.
patent: 5110438 (1992-05-01), Ohmi et al.
patent: 5116482 (1992-05-01), Setoyama et al.
patent: 5272417 (1993-12-01), Ohmi
patent: 5330606 (1994-07-01), Kubota et al.
patent: 5332880 (1994-07-01), Kubota et al.
Journal of Vaccum Science and Technology: Part A, vol. 4, No. 3, pp. 729-738, May/June 1986, D.L. Flamm, "Frequency Effects in Plasma Etching".

Affiliated with

Also associated with

Rating

Plasma treatment method and apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma treatment method and apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma treatment method and apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1867865