Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-13
2007-02-13
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S694000, C438S788000, C438S636000
Reexamination Certificate
active
10987790
ABSTRACT:
A method for forming a semiconductor device (10) includes forming an organic anti-reflective coating (OARC) layer (18) over the semiconductor device (10). A tetra-ethyl-ortho-silicate (TEOS) layer (20) is formed over the OARC layer (18). The TEOS layer (20) is exposed to oxygen-based plasma at a temperature of at most about 300 degrees Celsius. In an alternative embodiment, the TEOS layer (20) is first exposed to a nitrogen-based plasma before being exposed to the oxygen-based plasma. A photoresist layer (22) is formed over the TEOS layer (20) and patterned. By applying oxygen based plasma and nitrogen based plasma to the TEOS layer (20) before applying photoresist, pattern defects are reduced.
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Fisher Brian J.
Hall Mark D.
Junker Kurt H.
Shen Jin Miao
Sheth Vikas R.
Chiu Joanna G.
Freescale Semiconductor Inc.
Goodwin David
Hill Daniel D.
Huynh Andy
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