Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-16
2007-10-16
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S624000, C438S778000, C438S782000, C257SE21002
Reexamination Certificate
active
10843957
ABSTRACT:
An embodiment of the invention is a method of manufacturing a semiconductor wafer. The method includes depositing spin-on-glass material over the semiconductor wafer (step208), modifying a top surface of the spin-on glass material to form a SiO2layer (step210), applying a vapor prime (step212), forming a photoresist layer over the spin-on-glass material (step214), patterning the photoresist layer (step214), and then etching the semiconductor wafer (step216). Another embodiment of the invention is a method of manufacturing a dual damascene back-end layer on a semiconductor wafer. The method includes depositing spin-on-glass material over the dielectric layer and within the via holes (step208), modifying a top surface of the spin-on glass material to form a SiO2layer (step210), applying a vapor prime (step212), forming a photoresist layer over said spin-on-glass material (step214), patterning the photoresist layer (step214), and etching trench spaces (step216).
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Hong Hyesook
Jiang Ping
Kraft Robert
Tsui Ting Yiu
Brady W. James
Keagy Rose Alyssa
Novacek Christy L
Smith Zandra V.
Telecky , Jr. Frederick J.
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