Plasma treatment device

Details Plasma treatment device Plasma treatment device

1995-09-29

1999-04-27

Russel, Jeffrey E.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

118723MA, 31511171, 427579, C23C 1640, C23C 1652, H05H 111

Patent

active

058979239

ABSTRACT:
A plasma treatment device for forming a high-quality thin film with fewer surface flaws and etching by preventing the generation of fine powders from deposited films in a film-forming chamber, by means of plasma treatment using gaseous starting materials. The plasma treatment chamber device includes a plasma generation chamber 11, a power-supplying mechanism for supplying power to this chamber, a film-forming chamber 113 to be spatially connected to the plasma generation chamber 11, a magnetic field generation mechanism 14 provided around this film-forming chamber for forming a multicusp magnetic field therein, an evacuation mechanism for evacuating the chamber, a first gas-supplying mechanism 16 for supplying gaseous starting materials and a second gas-supplying mechanism 17 for supplying gaseous materials for forming films. An inner wall surface 113b of the film-forming chamber is located in an area having a multicusp magnetic field with an intensity of from 50 to 200 G. Alternatively, instead of the inner wall surface 113b, a member 61 formed a nonmagnetic material can be located within the film-forming chamber.

REFERENCES:
patent: 5427621 (1995-06-01), Gupta
patent: 5429070 (1995-07-01), Campbell et al.
patent: 5522936 (1996-06-01), Tamura
patent: 5565247 (1996-10-01), Suzuki
patent: 5605637 (1997-02-01), Shan et al.
patent: 5662819 (1997-09-01), Kadomura

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