Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2008-05-27
2008-05-27
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S288000, C257S622000, C257SE21400, C257SE21170, C257SE21311, C257SE21319
Reexamination Certificate
active
07378744
ABSTRACT:
A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
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Chou Yu-Hua
Luo Tzo-Hung
Tsai Jian-Shin
Tseng Chi-Chan
Yang Jong-Chen
Haynes & Boone LLP
Nhu David
Taiwan Semiconductor Manufacturing Company , Ltd.
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