Plasma treatment apparatus and method for plasma treatment

Details Plasma treatment apparatus and method for plasma treatment Plasma treatment apparatus and method for plasma treatment

2007-12-11

2007-12-11

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C257SE21475

Reexamination Certificate

active

11410234

ABSTRACT:
A plasma treatment apparatus and a method for plasma treatment are provided that made possible to control accurately a distance between plasma and an object to be treated (hereinafter referred to as an object), and that facilitated a transportation of a substrate that a width is thin and grown in size. The plasma treatment apparatus of the present invention is provided with a gas supply means for introducing a processing gas into a place between a first electrode and a second electrode under an atmospheric pressure or around atmospheric pressure; a plasma generation means for generating plasma by applying a high frequency voltage to the first electrode or the second electrode under the condition that the processing gas is introduced; and, a transport means for transporting the object by floating the object by blowing the processing gas or a transporting gas to the object. An etching treatment; an ashing treatment; a thin film formation; or a cleaning treatment of components using the first electrode and the second electrode is carried out by moving a relative position between the first electrode and the second electrode, and the object.

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