Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1994-05-03
1996-05-14
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
156345, 134 11, 118723E, 118719, H05H 100
Patent
active
055159869
ABSTRACT:
An apparatus for plasma treating workpieces in vacuum includes a stack of plasma chambers (20). Handling of workpieces to and from the plasma chambers of the stack is performed in parallelism by one handling device and through lateral handling openings of the plasma chambers. The handling device is rotatable around an axis parallel to the handling openings of the plasma chambers and comprises transport apparatus simultaneously movable radially with respect to the axis of rotation towards and from the handling openings.
REFERENCES:
patent: 4798739 (1989-01-01), Schmitt
patent: 4987004 (1991-01-01), Yamazaki et al.
patent: 4989543 (1991-02-01), Schmitt
patent: 5112641 (1992-05-01), Harada et al.
patent: 5217340 (1993-06-01), Harada et al.
Emeraud Thierry
Schmitt Jacques
Turlot Emmanuel
Balzers Aktiengesellschaft
Dang Thi
LandOfFree
Plasma treatment apparatus and method for operating same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma treatment apparatus and method for operating same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma treatment apparatus and method for operating same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1891133