Plasma treating methods of fabricating phase change memory...

Details Plasma treating methods of fabricating phase change memory... Plasma treating methods of fabricating phase change memory...

2009-06-18

2011-10-18

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S095000

Reexamination Certificate

active

08039297

ABSTRACT:
Phase change memory devices may be fabricated by forming a first electrode on a substrate and forming a chalcogenide material on the first electrode. The chalcogenide material is plasma treated sufficiently to induce a plasma species throughout the chalcogenide material. A second electrode is formed on the chalcogenide material. Related devices are also described.

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