Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1989-04-14
1992-02-04
Nguyen, Nam X.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
156345, 156643, 156646, 20429833, 20429809, 20429838, B44C 122, H01L 21306, C03C 1500
Patent
active
050857509
ABSTRACT:
The present invention relates to a plasma treating method and apparatus therefor, the plasma treating method comprising the steps of supplying a liquid refrigerant whose temperature is not higher than 0.degree. C. into a specimen table having a specimen place surface, cooling a specimen placed on the specimen place surface, treating the cooled specimen utilizing a gas plasma, and recovering the liquid refrigerant, in its liquid state, retained in the specimen table from the specimen table. The plasma treating apparatus comprised means for producing a gas plasma, a specimen table on which is placed a specimen to be treated utilizing the gas plasma and interiorly formed with a space for retaining a liquid refrigerant whose temperature is not higher than 0.degree. C., means for supplying the liquid refrigerant to the space, and means for recovering the liquid refrigerant, in its liquid state, to the liquid refrirant supplying means, whereby an increase in consumption quantity of the liquid refrigerant can be suppressed, and thus an increase in operating cost of the apparatus can be suppressed.
REFERENCES:
patent: 4522674 (1985-06-01), Ninomiya et al.
patent: 4526644 (1985-07-01), Fujiyama et al.
patent: 4664747 (1987-05-01), Sekiguchi et al.
patent: 4668365 (1987-05-01), Foster et al.
patent: 4689112 (1987-08-01), Bersin
patent: 4705595 (1987-11-01), Okudaira et al.
patent: 4771730 (1988-09-01), Tezuka
patent: 4911812 (1990-03-01), Kudo et al.
patent: 4956043 (1990-09-01), Kanetomo et al.
Kawasaki Yoshinao
Kudo Katsuyoshi
Soraoka Minolu
Tsubone Tsunehiko
Hitachi , Ltd.
Nguyen Nam X.
LandOfFree
Plasma treating method and apparatus therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma treating method and apparatus therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma treating method and apparatus therefor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-345966