Plasma surface treatment method, quartz member, plasma...

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

Reexamination Certificate

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C427S575000, C118S715000, C438S710000, C216S058000

Reexamination Certificate

active

07857984

ABSTRACT:
A plasma surface treatment method for performing a surface treatment on a quartz member used under a plasma-exposed environment by using a plasma having an ion energy greater than about 5.3 eV. The plasma has, near a surface of the quartz member, an electron temperature higher than or equal to about 2 eV. Further, in a plasma processing apparatus for generating a plasma by introducing a microwave into a processing chamber through a planar antenna having a plurality of slots, the surface treatment is carried out for about 30-300 seconds by using a plasma of a processing gas containing Ar gas and N2gas under conditions of a processing pressure lower than or equal to about 15 Pa and a microwave power higher than or equal to about 0.9 W/cm2, the surface treatment being repeated 25 to 2000 times.

REFERENCES:
patent: 5242561 (1993-09-01), Sato
patent: 6250250 (2001-06-01), Maishev et al.
patent: 2004/0033361 (2004-02-01), Hamaguchi
patent: 2004/0102053 (2004-05-01), Kitagawa et al.
patent: 2004/0221809 (2004-11-01), Ohmi et al.
patent: 2005/0205013 (2005-09-01), Nakanishi et al.
patent: 2006/0275710 (2006-12-01), Yamazaki et al.
patent: 2000-294550 (2000-10-01), None
patent: 2001-0072001 (2001-07-01), None
patent: 10-2005-0075442 (2005-07-01), None
English Translation of JP-2000-294550 (Emi et al).

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