Plasma state monitoring to control etching processes and...

Details Plasma state monitoring to control etching processes and... Plasma state monitoring to control etching processes and...

2008-07-22

2008-07-22

Olsen, Allan (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C216S061000, C216S067000

Reexamination Certificate

active

07402257

ABSTRACT:
The present invention is generally directed to plasma state monitoring to control etching processes and across-wafer uniformity, and a system for performing same. In one illustrative embodiment, the method comprises generating a plasma within an etching tool, monitoring at least one characteristic of the generated plasma, and controlling at least one parameter of a plasma etching process performed in the tool based upon the monitored at least one characteristic of the plasma. In another illustrative embodiment, the method comprises generating a plasma within an etch tool, performing a plasma etching process within the etch tool, determining at least one characteristic of the plasma, and controlling at least one parameter of the etching process based upon a comparison of the determined at least one characteristic of the plasma and a target value for the determined at least one characteristic of the plasma.

REFERENCES:
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patent: WO 0129873 (2001-04-01), None
patent: WO 0223289 (2002-03-01), None

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