Plasma source for HDP-CVD chamber

Details Plasma source for HDP-CVD chamber Plasma source for HDP-CVD chamber

1998-06-16

1999-08-31

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723I, 156345, C23C 1600

Patent

active

059449020

ABSTRACT:
A plasma system is disclosed for processing a substrate and includes a chamber body defining a plasma cavity therein and having a centrally located gas inlet, and a top antenna configured in position relative to the plasma cavity to produce a center-peaked plasma density profile above the substrate during operation. The top antenna has a central passage which surrounds the centrally located gas inlet. A side antenna is preferably configured and positioned relative to the plasma chamber to produce a hollow-center plasma density profile above the substrate during operation. Together, the top and side antennas and the centrally located gas inlet provide a uniform plasma directly over the surface of the substrate to be processed.

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patent: 5795429 (1998-08-01), Ishii et al.
patent: 5824158 (1998-10-01), Takeuchi et al.

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