Plasma source for HDP-CVD chamber

Details Plasma source for HDP-CVD chamber Plasma source for HDP-CVD chamber

1997-02-10

1998-09-01

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723I, 156345, 31511151, C23C 1600

Patent

active

058006214

ABSTRACT:
A plasma system is disclosed for processing a substrate and includes a chamber body defining a plasma cavity therein and having a centrally located gas inlet, and a top antenna configured in position relative to the plasma cavity to produce a center-peaked plasma density profile above the substrate during operation. The top antenna has a central passage which surrounds the centrally located gas inlet. A side antenna is preferably configured and positioned relative to the plasma chamber to produce a hollow-center plasma density profile above the substrate during operation. Together, the top and side antennas and the centrally located gas inlet provide a uniform plasma directly over the surface of the substrate to be processed.

REFERENCES:
patent: 4948458 (1990-08-01), Ogle
patent: 5401350 (1995-03-01), Patrick et al.
patent: 5435881 (1995-07-01), Ogle
patent: 5522934 (1996-06-01), Suzuki et al.

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