Plasma sculpturing with a non-planar sacrificial layer

Details Plasma sculpturing with a non-planar sacrificial layer Plasma sculpturing with a non-planar sacrificial layer

1984-03-20

1985-05-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 156668, 204192E, 252 791, 427 38, B44C 122, C03C 1500, C03C 2506, B29C 1708

Patent

active

045156522

ABSTRACT:
A method of plasma planarization of the surface topography of a substrate layer is provided wherein a sacrificial layer, having an etch rate substantially different from the etch rate of the substrate layer, is applied to the surface topography of that substrate layer. The sacrificial and substrate layers are then plasma etched to remove the sacrificial layer and portions of the substrate layer. The ratio of substrate layer to sacrificial layer etch rate can be controlled by the specific material and etchant used to compensate for non-planar surface features of the sacrificial layer such that the resulting substrate surface topography is planar.

REFERENCES:
patent: 3718514 (1973-02-01), Erdman et al.
patent: 4025411 (1977-05-01), Hom-Ma et al.
patent: 4293588 (1981-10-01), Neukomm
patent: 4377438 (1983-03-01), Moriya et al.
"Plasma Planarization"; A. C. Adams; Solid State Technology; Apr., 1981; pp. 178-181.
"A 6K-Gate CMOS Gate Array"; Terio Kobayashi et al.; IEEE International Solid-State Circuits Conference; Feb. 11, 1982, pp. 174-175.
"Planarization Properties of Resist and Polyimide Coatings"; Journal of the Electrochemical Society; Jul., 1983, pp. 1543-1548, White.
"Planarization of Phosphosilicate Glass Films"; L. F. Johnson et al.; J. Vac. Sci. Technol. B; (2); Apr.-Jun. 1983; pp. 487-489.
"LSI Surface Leveling by RF Sputter Etching"; Yoshio Hom-Ma et al., J. Electrochem. Soc.; Sep. 1979; pp. 1531-1533.
J. Electrochem. Soc. Solid-State Science and Technology, vol. 128, No. 2, Feb. 1981, Planarization of Phosphorus-Doped Silicon Dioxide, A. C. Adams et al., pp. 423-429.

Affiliated with

Also associated with

Rating

Plasma sculpturing with a non-planar sacrificial layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma sculpturing with a non-planar sacrificial layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma sculpturing with a non-planar sacrificial layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1798034