Plasma-resistant member for semiconductor manufacturing...

Details Plasma-resistant member for semiconductor manufacturing... Plasma-resistant member for semiconductor manufacturing...

2005-01-04

2005-01-04

Wood, Elizabeth D. (Department: 1755)

Compositions: ceramic

Ceramic compositions

Yttrium, lanthanide, actinide, or transactinide containing

C216S108000, C156S345100, C118S7230AN

Reexamination Certificate

active

06838405

ABSTRACT:
A plasma-resistant member for a semiconductor manufacturing apparatus, which can reduce the contamination level on a semiconductor wafer. The contents of Fe, Ni, Cr and Cu are made lower than 1.0 ppm respectively within a depth of at least 10 μm from surface in a plasma-resistant member.

REFERENCES:
patent: 6447937 (2002-09-01), Murakawa et al.
patent: 3145518 (2001-01-01), None

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