Plasma reactor with overhead RF electrode tuned to the plasma

Details Plasma reactor with overhead RF electrode tuned to the plasma Plasma reactor with overhead RF electrode tuned to the plasma

2005-01-04

2005-01-04

Paschall, Mark (Department: 3742)

Electric heating

Metal heating

By arc

C219S121410, C219S121400, C219S121520

Reexamination Certificate

active

06838635

ABSTRACT:
In accordance with one aspect of the invention, a plasma reactor has a capacitive electrode driven by an RF power source, and the electrode capacitance is matched at the desired plasma density and RF source frequency to the negative capacitance of the plasma, to provide an electrode plasma resonance supportive of a broad process window within which the plasma may be sustained.

REFERENCES:
patent: 4464223 (1984-08-01), Gorin
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 4973883 (1990-11-01), Hirose et al.
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5006760 (1991-04-01), Drake, Jr.
patent: 5017835 (1991-05-01), Oechsner
patent: 5032202 (1991-07-01), Tsai et al.
patent: 5055853 (1991-10-01), Garnier
patent: 5077499 (1991-12-01), Oku
patent: 5089083 (1992-02-01), Kojima et al.
patent: 5115167 (1992-05-01), Ootera et al.
patent: 5122251 (1992-06-01), Campbell et al.
patent: 5140223 (1992-08-01), Gesche et al.
patent: 5195045 (1993-03-01), Keane et al.
patent: 5198725 (1993-03-01), Chen et al.
patent: 5210466 (1993-05-01), Collins et al.
patent: 5213658 (1993-05-01), Ishida
patent: 5223457 (1993-06-01), Mintz et al.
patent: 5246532 (1993-09-01), Ishida
patent: 5272417 (1993-12-01), Ohmi
patent: 5274306 (1993-12-01), Kaufman et al.
patent: 5279669 (1994-01-01), Lee
patent: 5280219 (1994-01-01), Ghanbari
patent: 5300460 (1994-04-01), Collins et al.
patent: 5312778 (1994-05-01), Collins et al.
patent: 5401351 (1995-03-01), Samukawa
patent: 5453305 (1995-09-01), Lee
patent: 5463525 (1995-10-01), Barnes et al.
patent: 5512130 (1996-04-01), Barna et al.
patent: 5534070 (1996-07-01), Okamura et al.
patent: 5537004 (1996-07-01), Imahashi et al.
patent: 5554223 (1996-09-01), Imahashi
patent: 5567268 (1996-10-01), Kadomura
patent: 5587038 (1996-12-01), Cecchi et al.
patent: 5592055 (1997-01-01), Capacci et al.
patent: 5595627 (1997-01-01), Inazawa et al.
patent: 5605637 (1997-02-01), Shan et al.
patent: 5618382 (1997-04-01), Mintz et al.
patent: 5627435 (1997-05-01), Jansen et al.
patent: 5660671 (1997-08-01), Harada et al.
patent: 5662770 (1997-09-01), Donohoe
patent: 5674321 (1997-10-01), Pu et al.
patent: 5685914 (1997-11-01), Hills et al.
patent: 5705019 (1998-01-01), Yamada et al.
patent: 5707486 (1998-01-01), Collins
patent: 5710486 (1998-01-01), Ye et al.
patent: 5720826 (1998-02-01), Hayashi et al.
patent: 5733511 (1998-03-01), De Francesco
patent: 5792376 (1998-08-01), Kanai et al.
patent: 5846885 (1998-12-01), Kamata et al.
patent: 5849136 (1998-12-01), Mintz et al.
patent: 5849372 (1998-12-01), Annaratone et al.
patent: 5855685 (1999-01-01), Tobe et al.
patent: 5858819 (1999-01-01), Miyasaka
patent: 5863376 (1999-01-01), Wicker et al.
patent: 5904799 (1999-05-01), Donohoe
patent: 5914568 (1999-06-01), Nonaka
patent: 5936481 (1999-08-01), Fujii
patent: 5997962 (1999-12-01), Ogasawara et al.
patent: 6043608 (2000-03-01), Samukawa et al.
patent: 6093457 (2000-07-01), Okumura et al.
patent: 6096160 (2000-08-01), Kadomura
patent: 6110395 (2000-08-01), Gibson, Jr.
patent: 6113731 (2000-09-01), Shan et al.
patent: 6142096 (2000-11-01), Sakai et al.
patent: 6152071 (2000-11-01), Akiyama et al.
patent: 6155200 (2000-12-01), Horiike et al.
patent: 6162709 (2000-12-01), Raoux et al.
patent: 6188564 (2001-02-01), Hao
patent: 6245190 (2001-06-01), Masuda et al.
patent: 6251216 (2001-06-01), Okamura et al.
patent: 6262538 (2001-07-01), Keller
patent: 6290806 (2001-09-01), Donohoe
patent: 6337292 (2002-01-01), Kim et al.
patent: 6346915 (2002-02-01), Okumura et al.
patent: RE37580 (2002-03-01), Barnes et al.
patent: 6451703 (2002-09-01), Liu et al.
patent: 6528751 (2003-03-01), Hoffman et al.
patent: 0 719 447 (1998-07-01), None
patent: WO 0171765 (2001-09-01), None
U.S. Appl. No. 09/527,342, filed Mar. 17, 2000 entitled, “Plasma Reactor With Overhead RF Electrode Tuned To The Plasma,” by Daniel Hoffman, et al.
U.S. Appl. No. 10/007,367, filed Oct. 22, 2001 entitled, “Merie Plasma Reactor With Overhead RF Electrode Tuned To The Plasma With Arcing Suppression,” by Daniel Hoffman, et al.
U.S. Appl. No. 10/028,922, filed Dec. 19, 2001 entitled, “Plasma Reactor With Overhead RF Electrode Tuned To The Plasma With Arcing Suppression,” by Daniel Hoffman, et al.

Affiliated with

Also associated with

Rating

Plasma reactor with overhead RF electrode tuned to the plasma does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma reactor with overhead RF electrode tuned to the plasma, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma reactor with overhead RF electrode tuned to the plasma will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3407750