Plasma reactor with overhead RF electrode tuned to the...

Details Plasma reactor with overhead RF electrode tuned to the... Plasma reactor with overhead RF electrode tuned to the...

2006-04-18

2006-04-18

Paschall, Mark (Department: 3742)

Electric heating

Metal heating

By arc

C219S121570, C118S7230IR, C156S345440, C156S345480, C204S298210

Reexamination Certificate

active

07030335

ABSTRACT:
A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead electrode overlying said workpiece support, the electrode comprising a portion of said chamber wall, an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within said chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that said overhead electrode and the plasma formed in said chamber at said desired plasma ion density resonate together at an electrode-plasma resonant frequency, said frequency of said generator being at least near said electrode-plasma resonant frequency. The reactor further includes an insulating layer formed on a surface of said overhead electrode facing said workpiece support, a capacitive insulating layer between said RF power generator and said overhead electrode, and a metal foam layer overlying and contacting a surface of said overhead electrode that faces away from said workpiece support.

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