Plasma reactor with magnet for protecting an electroacoustic chu

Details Plasma reactor with magnet for protecting an electroacoustic chu Plasma reactor with magnet for protecting an electroacoustic chu

1996-10-07

1998-11-03

Dang, Thi

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438732, 156345, 118728, 118723E, H05H 100

Patent

active

058308083

ABSTRACT:
The present invention ameliorates the problem in a plasma reactor of plasma attacking an electrostatic chuck and the wafer periphery backside by placing a magnet in the quartz wall adjacent the wafer peripheral edge.

REFERENCES:
patent: 4771730 (1988-09-01), Tezuka
patent: 5246532 (1993-09-01), Ishida
patent: 5306379 (1994-04-01), Kamide
patent: 5346579 (1994-09-01), Cook
patent: 5370785 (1994-12-01), Dandl
patent: 5431769 (1995-07-01), Kisakibaru

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