Plasma reactor apparatus with independent capacitive and...

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With gas inlet structure

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C156S345380, C156S345480, C156S345510, C156S345540, C118S7230AN, C118S729000

Reexamination Certificate

active

11411163

ABSTRACT:
A plasma reactor includes a toroidal plasma source having an RF power applicator, and RF generator being coupled to the RF power applicator. The reactor further includes a capacitively coupled plasma source power applicator or electrode at the ceiling or the workpiece support, a VHF power generator being coupled to the capacitively coupled source power applicator, a plasma bias power applicator or electrode in the workpiece support and an RF bias power generator coupled to the plasma bias power applicator. A controller adjusts the relative amounts of power simultaneously coupled to plasma in the chamber and conduit by the toroidal plasma source and by the capacitively coupled plasma source power applicator.

REFERENCES:
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4585516 (1986-04-01), Corn et al.
patent: 4863549 (1989-09-01), Grunwald
patent: 5512130 (1996-04-01), Barna et al.
patent: 5556501 (1996-09-01), Collins et al.
patent: 5817534 (1998-10-01), Ye et al.
patent: 5846885 (1998-12-01), Kamata et al.
patent: 5985375 (1999-11-01), Donohoe et al.
patent: 6033585 (2000-03-01), Wicker et al.
patent: 6089181 (2000-07-01), Suemasa et al.
patent: 6110287 (2000-08-01), Arai et al.
patent: 6113731 (2000-09-01), Shan et al.
patent: 6126778 (2000-10-01), Donohoe et al.
patent: 6190496 (2001-02-01), DeOrnellas et al.
patent: 6193855 (2001-02-01), Gopalraja et al.
patent: 6270617 (2001-08-01), Yin et al.
patent: 6309978 (2001-10-01), Donohoe et al.
patent: 6312556 (2001-11-01), Donohoe et al.
patent: 6354240 (2002-03-01), DeOrnellas et al.
patent: 6403491 (2002-06-01), Liu et al.
patent: 6444084 (2002-09-01), Collins
patent: 6444085 (2002-09-01), Collins et al.
patent: 6454898 (2002-09-01), Collins et al.
patent: 6468388 (2002-10-01), Hanawa et al.
patent: 6642149 (2003-11-01), Suemasa et al.
patent: 6656273 (2003-12-01), Toshima et al.
patent: 6939434 (2005-09-01), Collins et al.
patent: 7094316 (2006-08-01), Hanawa et al.
patent: 7094670 (2006-08-01), Collins et al.
patent: 2002/0039626 (2002-04-01), Nakahigashi et al.
patent: 2002/0041160 (2002-04-01), Barnes et al.
patent: 2004/0154747 (2004-08-01), Ni et al.
patent: 2005/0230047 (2005-10-01), Collins et al.
patent: 2006/0081558 (2006-04-01), Collins et al.
patent: 553704 (1993-08-01), None
patent: 2003-073836 (2003-03-01), None
patent: WO 03043061 (2003-05-01), None
Kim, H.C., et al., “Analytic model for a dual frequency capacitive discharge”, Physics of Plasmas, Nov. 2003, pp. 4545-4551, vol. 10, No. 11, American Institute of Physics, USA.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma reactor apparatus with independent capacitive and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma reactor apparatus with independent capacitive and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma reactor apparatus with independent capacitive and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3751654

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.